Pattern forming method using chemically amplified resist and app

Details Pattern forming method using chemically amplified resist and app Pattern forming method using chemically amplified resist and app

1997-10-15

2000-08-01

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430322, G03F 726

Patent

active

060964847

ABSTRACT:
A chemically amplified resist is applied to a semiconductor substrate and subjected to post-apply bake, and exposed to light, then, the resist is treated with a vapor of an organic solvent such as PGMEA. By treating with the vapor of the organic solvent, acid diffusion in the resist in the post-exposure bake is suppressed, and a resist pattern having an excellent profile is obtained by development.

REFERENCES:
patent: 4921778 (1990-05-01), Thackeray et al.
patent: 5079131 (1992-01-01), Thackeray et al.
patent: 5108875 (1992-04-01), Thackeray et al.
patent: 5326675 (1994-07-01), Niki et al.
patent: 5366852 (1994-11-01), Pavelchek et al.
patent: 5380609 (1995-01-01), Fujita et al.
patent: 5407786 (1995-04-01), Ito et al.
patent: 5429910 (1995-07-01), Hanawa
patent: 5631314 (1997-05-01), Wakiya
Azuma et al., "The Role of the Residual Solvent for Chemical Amplification Resists," Journal of the Electrochemical Society, vol. 140, No. 11, Nov., 1993, pp. 3158-3161.

Affiliated with

Also associated with

Rating

Pattern forming method using chemically amplified resist and app does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Pattern forming method using chemically amplified resist and app, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pattern forming method using chemically amplified resist and app will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-662205