Method for fabricating an electrode structure

Details Method for fabricating an electrode structure Method for fabricating an electrode structure

1997-07-15

1999-10-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438602, 438603, 438604, 438606, H01L 2128

Patent

active

059666293

ABSTRACT:
The electrode structure of the invention includes a p-type Al.sub.x Ga.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, x+y.ltoreq.1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the electrode layer contains a mixture of a metal nitride and a metal hydride.

REFERENCES:
patent: 5422500 (1995-06-01), Tomokawa et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5583676 (1996-12-01), Akiyama et al.
patent: 5650641 (1997-07-01), Sassa et al.
patent: 5804834 (1998-09-01), Shimoyama et al.
Nakamura et al. "P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes" Jpn. J. Appl. Phys. (1993) 32: L8-L11.
Lin et al. "Low resistance ohmic contacts on wide band-gap GaN" Appl. Phys. Lett. (1994) 64: 1003-1005.

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