Method for manufacturing a MOSFET having a side-wall film formed

Details Method for manufacturing a MOSFET having a side-wall film formed Method for manufacturing a MOSFET having a side-wall film formed

1997-05-14

1999-10-12

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438775, 438776, H01L 21336, H01L 2131, H01L 21469

Patent

active

059666064

ABSTRACT:
A side-wall film of a gate electrode is fabricated as a two-layer structure including an underlying thin silicon nitride film and a relatively thick silicon oxide film. The silicon nitride film covers and protects the edge of the gate oxide film against formation of a gate bird's beak at the edge of the gate oxide film. The side-wall contacts with the silicon substrate substantially at the thick silicon oxide film of the side-wall, which prevents formation of a carrier trap area adjacent to the channel area. The bottom of the side-wall may be a nitride-doped silicon oxide instead.

REFERENCES:
patent: 4356623 (1982-11-01), Hunter
patent: 5119152 (1992-06-01), Mizuno
patent: 5371028 (1994-12-01), Koh
patent: 5382550 (1995-01-01), Iyer
patent: 5424232 (1995-06-01), Yamauchi
patent: 5493138 (1996-02-01), Koh
Shimizu et al., "Advanced Ion Implantation and Rapid Thermal Annealing Technologies for Highly Reliable 0.25um Dual Gate CMOS", IEEE Symposium on VLSI Technology Digest of Technical Papers (1996).
Togo et al., "Novel Deep Sub-Quarter Micron PMOSFETs with Ultra-shallow Junctions Utilizing Boron Diffusion from Poly-Si/Oxide (BDSOX)", IEEE Symposium on VLSI Tech. Digest of Tech. Papers (1994).

Affiliated with

Also associated with

Rating

Method for manufacturing a MOSFET having a side-wall film formed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a MOSFET having a side-wall film formed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a MOSFET having a side-wall film formed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661794