Method of forming low resistance gate electrodes

Details Method of forming low resistance gate electrodes Method of forming low resistance gate electrodes

1998-06-01

1999-10-12

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, H01L 21336

Patent

active

059665971

ABSTRACT:
Provided is a transistor device, and a process for fabricating such a device, in which a top portion of a polysilicon gate electrode is removed and replaced by a low resistance metal material using a damascene process. Gate electrodes in accordance with the present invention provide improved conductivity over conventional polysilicon and silicide-capped polysilicon gate electrodes, due to the low resistivity of the metal, but do not have the drawbacks associated with the complete removal and replacement of polysilicon with a metal.

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