Method for forming contact hole of semiconductor device

Details Method for forming contact hole of semiconductor device Method for forming contact hole of semiconductor device

1996-05-23

1998-02-03

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15665911, 216 41, 437189, 437195, H01L 2100

Patent

active

057140383

ABSTRACT:
A method of forming a contact hole through an interlayer insulation layer in a semiconductor device using a sidewall spacer formed on the sidewalls of a pattern hole in a photosensitive film which serves as a mask to an anisotropic etching process used to form the contact hole.

REFERENCES:
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 5227014 (1993-07-01), Crotti et al.
patent: 5409743 (1995-04-01), Bouffard et al.
patent: 5567270 (1996-10-01), Liu
Wolf, "Silicon Processing for the VLSI Era vol. 1: Process Technology", pp. 191-194, 1986.
Wolf, "Silicon Processing for the VLSI Era Vol. 2: Process Integration", p. 121, 1990.

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