Static information storage and retrieval – Read/write circuit – Precharge
Patent
1996-07-23
1997-07-29
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Precharge
365202, G11C 700
Patent
active
056527276
ABSTRACT:
A semiconductor memory device includes first and second MOS transistors connecting a pair of data lines with a specific potential supplying node. A power transmitting circuit couples the specific potential supplying node with a power supply circuit of an equalizing potential after said first and second switching elements are made conductive. The power transmitting circuit isolates the specific potential supplying node from the power supply circuit when the equalization begins. As an alternative to the power transmitting circuit, a supplying circuit may be connected to supply a precharge potential to the specific potential supplying node when the equalization begins, and supply an equalizing potential to the specific potential supplying node when the switching elements are both turned on.
REFERENCES:
patent: 4903238 (1990-02-01), Miyatake
patent: 5036492 (1991-07-01), Runaldue
patent: 5091889 (1992-02-01), Hamano et al.
patent: 5247482 (1993-09-01), Kim
patent: 5325335 (1994-06-01), Ang et al.
patent: 5402378 (1995-03-01), Min et al.
patent: 5477496 (1995-12-01), Tanaka et al.
Tanabe Tetsuya
Tanaka Yasuhiro
Nguyen Tan T.
OKI Electric Industry Co., Ltd.
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-637695