Static memory device provided with high-speed writing circuit

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

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365154, G11C 700

Patent

active

049339036

ABSTRACT:
A static semiconductor memory device having an improved write circuit which can perform a write operation at a high speed is disclosed. The memory device comprises a plurality of memory cells each having a flip-flop holding a first level and a second level lower than the first level and a write circuit for operatively generating a write data signal which is applied to a selected one of the memory cells, the write data signal selectively assuming a low level of write data signal which is lower than the second level.

REFERENCES:
patent: 4791613 (1988-12-01), Hardee

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