Semiconductor memory device capable of being accessed before com

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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365203, 365222, 365233, G11C 700, G11C 800

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047649011

ABSTRACT:
The semiconductor memory device contains a plurality of memory cells, a row decoder for selectively actuating memory cells according to the selected one of the row and column address signals, and bit lines set to a potential dependent on the data in the memory cell actuated. Particularly, this memory device has latching circuits for latching the potentials on the bit lines, and a timing controller for causing the latching circuits to keep the latched potentials for a predetermined period after the update of the row address signal.

REFERENCES:
patent: 4085457 (1978-04-01), Itoh
patent: 4106109 (1978-08-01), Fassbender
patent: 4131951 (1978-12-01), Asahi
patent: 4330852 (1982-05-01), Redwine et al.
patent: 4354256 (1982-10-01), Miyasaka
patent: 4542483 (1985-09-01), Procy
patent: 4551641 (1985-11-01), Pelley
O. Minato et al., "A 20 ns 64K CMOS SRAM," IEEE International Solid State Circuits Conference, pp. 222-223 and 343, vol. 27, 2-23-84.
J. J. Fallin, "The Chip That Refreshes Itself," Computer Design, pp. 111-122, vol. 22, No. 3, (Mar. 1983).
Kawamoto et al., "A 288Kb CMOS Pseudo SRAM," IEEE International Solid-State Circuits Conference, pp. 276-277, Feb. 24, 1984.

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