Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

1995-05-30

1997-07-01

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257532, 257758, H01L 27108

Patent

active

056441517

ABSTRACT:
A pair of electrically conductive regions of ruthenium dioxide are formed on a BPSG film covering DRAM memory cells arranged in a matrix form. The conductive region is extended in a column direction to be connected to one of impurity diffused regions of MOS transistors of the memory cells at contact holes, and also connected to one of impurity diffused regions of MOS transistors of column direction selection. Formed beneath the conductive region (capacitor upper electrodes) are capacitor lower electrodes connected to the other impurity diffused regions of the memory cell MOS transistors and a high-dielectric film. The conductive region is connected to a (1/2)Vcc power supply. Since the upper electrodes and wiring lines of capacitors can be formed at the same time, the number of steps in a fabrication method can be reduced.

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