Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1999-09-08

2000-08-22

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

365226, 36518524, 3651852, 36518518, 36518525, 365204, 365200, G11C 1140

Patent

active

061082465

ABSTRACT:
A nonvolatile memory semiconductor memory device is disclosed which incorporates fuse-cells in which data for setting a mode and redundancy data are stored. The nonvolatile memory semiconductor memory device incorporates a fuse-cell circuit including fuse-cells, a fuse-cell controlling circuit for reading data stored in the fuse-cell, a voltage boosting circuit for generating a boosted voltage and a voltage converting circuit which uses a reference voltage to convert the boosted voltage into read voltage for use when data is read from the fuse-cell. The reference voltage is generated by using a threshold voltage of a reference cell having the same structure as that of the fuse-cell.

REFERENCES:
patent: 5485425 (1996-01-01), Iwai et al.
patent: 5579256 (1996-11-01), Kajigaya et al.
patent: 5881014 (1999-03-01), Ooishi
patent: 5909398 (1999-06-01), Tanzawa et al.

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