Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-30
2000-08-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257374, H01L 2701, H01L 2712, H01L 310392
Patent
active
061076635
ABSTRACT:
A circuit and method for an improved inverter is provided. The present invention capitalizes on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. Additionally, the gate and body of the transistors are biased to modify the threshold voltage of the transistor (V.sub.t). The conductive sidewall member configuration conserves surface space and achieves a higher density of surface structures per chip. This design provides fast switching capability for low power battery operated CMOS circuits and systems. The transistor structure offers performance advantages from both metal-oxide semiconductor (MOS) and bipolar junction transistor (BJT) designs. The devices can be used in a variety of applications, digital and analog, wherever a more compact structure with low power consumption and fast response time is needed.
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Forbes Leonard
Noble Wendell P.
Micro)n Technology, Inc.
Ngo Ngan V.
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