Method of making a local interconnect using spacer-masked contac

Details Method of making a local interconnect using spacer-masked contac Method of making a local interconnect using spacer-masked contac

1997-03-05

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438639, 438666, 438667, 438668, H01L 214763

Patent

active

061071897

ABSTRACT:
A semiconductor device including a structure having an upper surface and an contact surface formed at the upper surface of the structure. An insulating material is formed over the contact surface and a conductive runner extends over the active area such that a lower surface of the conductive runner is above and separated from the active area. A widened portion is formed in the conductive runner with an opening formed in the widened portion and self-aligned to edges of the widened portion. A conductive pillar is self-aligned to the opening and extends downward through the opening, through the insulating material, to the active area. The conductive runner provides local interconnection that can be routed over device features formed in and on the structure without using an additional metal layer.

REFERENCES:
patent: 5490901 (1996-02-01), Kim
patent: 5658830 (1997-08-01), Jeng

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