Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-09-04
2000-08-22
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
408308, 408199, 408225, 408588, H01L 21336
Patent
active
061071501
ABSTRACT:
The present invention is directed to a semiconductor device having an ultra thin gate oxide and a method for making same. The method is comprised of implanting nitrogen into a region of a semiconducting substrate, and forming a gate dielectric above the region in the substrate. The method further comprises forming a gate conductor above the gate dielectric and forming at least one source/drain region. The present invention is also directed to a transistor having a gate dielectric positioned above a surface of a semiconducting substrate, the gate dielectric being comprised of a nitrogen bearing oxide having a nitrogen concentration ranging from approximately 4-8%. The transistor further comprises a gate conductor positioned above the gate dielectric and at least one source/drain region.
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patent: 4925805 (1990-05-01), Van Ommen et al.
patent: 5861335 (1999-01-01), Hause et al.
patent: 5972783 (1999-10-01), Arai et al.
patent: 5975912 (1999-11-01), Hillman et al.
Fulford H. Jim
Gardner Mark I.
Advanced Micro Devices , Inc.
Smith Matthew
Yevsikov Victor
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