Method for making a mushroom shaped DRAM capacitor

Details Method for making a mushroom shaped DRAM capacitor Method for making a mushroom shaped DRAM capacitor

1998-07-17

2000-08-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438666, 257296, 257300, H01L 218242, H01L 2144, H01L 27108

Patent

active

061071390

ABSTRACT:
A method of forming a capacitor for a DRAM memory cell is disclosed. The method comprises the steps of forming a crown shaped capacitor being partially filled with oxide. Next, nitride spacers and polysilicon spacers are formed on the sides of crown capacitor. The remaining oxide is removed and then the oxide spacers are removed to leave a mushroom shaped bottom storage node. A dielectric is deposited and a top conductive node is deposited to complete the capacitor.

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patent: 6037212 (2000-03-01), Chao
patent: 6051463 (2000-04-01), Lee

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