Non-volatile semiconductor memory device using a differential ce

Details Non-volatile semiconductor memory device using a differential ce Non-volatile semiconductor memory device using a differential ce

1991-03-29

1994-03-01

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257208, 257209, 365 51, H01L 2710, H01L 27108, G11C 502

Patent

active

052910458

ABSTRACT:
According to this invention, in a non-volatile semiconductor memory device, each memory cell for storing 1-bit data consists of two transistors, one transistor constituting each memory cell is formed in a memory cell array consisting of a plurality of bit lines and a plurality of word lines, and the other transistor constituting each memory cell is formed in a second memory cell array consisting of a plurality of bit lines and a plurality of word lines.

REFERENCES:
patent: 4896295 (1990-01-01), Corda
patent: 5204542 (1993-04-01), Namaki et al.
"A 23ns 256k EPROM with Double-Layer Metal and Address Transition Detection." Hoff, D., et al., ISSCC Digest of Technical Papers, (pp. 130-131), Feb. 16, 1989.

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