Semiconductor memory device and sense circuit

Details Semiconductor memory device and sense circuit Semiconductor memory device and sense circuit

1996-08-08

1998-03-31

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Noise suppression

365177, 365207, 365208, G11C 700

Patent

active

057346160

ABSTRACT:
A static RAM includes pre-amplifiers, which are made up solely of emitter-follower transistors having their collectors supplied with the power voltage, in one-to-one correspondence to sub common data line pairs which are connected by column switches to complementary data line pairs of memory arrays. The pre-amplifier is provided with a first switch which turns on during the selected state to connect the sub common data line pair to the bases of the transistors and a second switch which turns on during the unselected state to provide the bases with a certain bias voltage lower than the readout signal voltage on the sub common data line pair. The emitter-follower transistors have their emitters connected commonly to form common emitter lines, which are connected to pairs of input terminals of main amplifiers made up of CMOS transistors.

REFERENCES:
patent: 4899309 (1990-02-01), Kitazawa et al.
patent: 5301158 (1994-04-01), Yokomizo
patent: 5473568 (1995-12-01), Okamura
patent: 5577002 (1996-11-01), Takahashi

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