Process and material for manufacturing semiconductor devices

Details Process and material for manufacturing semiconductor devices Process and material for manufacturing semiconductor devices

1978-06-12

1981-02-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 204192E, 252 791, B44C 122, C23F 102, C03C 1500, C03C 2506

Patent

active

RE0305057

ABSTRACT:
A process step and material for use in the manufacture of semiconductor devices. To facilitate the etching of unmasked silicon dioxide, silicon nitride, silicon monoxide, bare silicon layers, or various refractory metals on preselected portions of a semiconductor slice, the material is exposed to a low pressure RF generated "cold" plasma (under 325.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon. The halocarbon is preferably a gas having one carbon atom per molecule and is preferably fully fluorine-substituted.

REFERENCES:
patent: 3477936 (1969-11-01), Gillery et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3654108 (1972-04-01), Smith
The Merck Index of Chemicals and Drugs, Seventh Edition, published by Merck & Co., Inc. in 1960, p. 212.

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