Method of forming a self-aligned silicide MOSFET with an extende

Details Method of forming a self-aligned silicide MOSFET with an extende Method of forming a self-aligned silicide MOSFET with an extende

1997-12-19

2000-07-11

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438592, 438595, 438655, H01L 21336

Patent

active

060872349

ABSTRACT:
The method of the present invention is a method of including forming a gate oxide layer on the substrate. A polysilicon layer is formed on the gate oxide layer. Then, a photographic and etching steps are used to form a gate structure. An oxidation is performed on the substrate and the gate structure to form an first oxide layer on the substrate and on the surface of the polysilicon gate. A silicon nitride layer is deposited on the first oxide layer. A side-wall spacers is formed on the side walls of the gate structure, a first portion of the first oxide layer remaining between the gate structure and the side-wall spacers, and a second portion of the first oxide layer remaining under the side-wall spacers. Next, a first ion implantation performed into the substrate to form first doped ions regions to serves as source and drain region of the transistor. Then, the side-wall spacers is removed, therefore remained the second portion of the first oxide layer covered by the side-wall spacers. Subsequently, a second ion implantation performed through the second portion of the first oxide layer to form second doped ion regions to serve as an extended source and drain region of the transistor. A rapid thermal annealing performed to form an extended source and drain junction and aligned to the region of the side-wall spacers being disposed.

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