Method of fabricating two dissimilar devices with diminished pro

Details Method of fabricating two dissimilar devices with diminished pro Method of fabricating two dissimilar devices with diminished pro

1997-08-22

2000-07-11

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, 438286, H01L 21336

Patent

active

060872217

ABSTRACT:
A method for fabricating dissimilar devices in an integrated circuit. In one embodiment, the method can be used to fabricate flash memory, including MOS transistors and flash cells. The method can be used to substantially cofabricate the MOS transistors and flash cells, particularly their gates. The method includes forming layers of adjacent materials for the MOS transistor gates and the flash cell gates, and simultaneously forming the MOS transistor gates and the flash cell gates from the layers of adjacent materials. The method further includes defining drains of the flash cells separate from defining sources of the flash cells.

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