Method of forming an integrated circuit device

Details Method of forming an integrated circuit device Method of forming an integrated circuit device

1998-05-06

2000-02-22

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438306, H01L 21336

Patent

active

060279796

ABSTRACT:
A mask is used for lightly doped drain and halo implants in an integrated circuit device. The mask exposes only portions of the substrate adjacent to field effect transistor gate electrodes. Since the halo implant is made only near the transistor channels, where it performs a useful function, adequate device reliability and performance is obtained. Since the halo implant is masked from those portions of the active regions for which it is not necessary, active region junction capacitances are lowered. Such lowered capacitances result in an improved transistor switching speed. The mask used to define the lightly doped drain and halo implant region can be easily formed from a straight forward combination of already existing gate and active area geometries.

REFERENCES:
patent: 4342149 (1982-08-01), Jacobs et al.
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4642878 (1987-02-01), Maeda
patent: 4649629 (1987-03-01), Miller et al.
patent: 4771014 (1988-09-01), Liou et al.
patent: 4843023 (1989-06-01), Chiu et al.
patent: 4855246 (1989-08-01), Codella et al.
patent: 4894694 (1990-01-01), Cham et al.
patent: 4950617 (1990-08-01), Kumagai et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5227321 (1993-07-01), Lee et al.
patent: 5504023 (1996-04-01), Hong
patent: 5534447 (1996-07-01), Hong
Ogura et al. "A Half Micron Mosfet using Double Implanted LDD," pager 29.6 from the 1982 IEDM Digest 1, pp. 718-21.
"Triple Diffusion Doubles RAM Speed," Lineback, Robert J., ElectronicsMay 5, 1983, pp. 54,61.

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