Method for producing very small structural widths on a semicondu

Details Method for producing very small structural widths on a semicondu Method for producing very small structural widths on a semicondu

1998-03-19

2000-02-22

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438259, 438264, H01L 21336

Patent

active

060279729

ABSTRACT:
Very narrow structures are produced on a semiconductor substrate. A first layer deposited over an edge of a structure is anisotropically etched back. The spacer at the edge of the structure which remains after the first layer and the structure are removed, after further deposition and etching steps, finally defines the position and width of the resulting microstructure. The very narrow structure may be the channel width of a flash memory cell.

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