Semiconductor device with a field-effect transistor having a low

Details Semiconductor device with a field-effect transistor having a low Semiconductor device with a field-effect transistor having a low

1995-12-12

1998-03-31

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438297, 438301, 438586, 438691, H01L 21265

Patent

active

057338124

ABSTRACT:
There is formed an isolation which surrounds an active region of a semiconductor substrate. Formed over the active region and on the isolation, respectively, are a gate electrode and two gate interconnections on both sides thereof. Between the gate electrode and the gate interconnections are located two first interspaces each of which is smaller in width than a specified value and a second interspace which is larger in width than the specified value and interposed between the two first interspaces. In forming side walls on both side faces of the gate electrode and gate interconnections by depositing an insulating film on the substrate, the first interspaces are buried with the insulating film. Thereafter, a metal film is deposited on the substrate, followed by chemical mechanical polishing till the gate electrode, gate interconnections, and side walls become exposed. By the process, withdrawn electrodes from a source/drain region for contact with the active region is formed by self alignment, while the withdrawn electrodes are insulated from the gate electrode and gate interconnections by the side walls.

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