Method of manufacturing MOS type semiconductor device of vertica

Details Method of manufacturing MOS type semiconductor device of vertica Method of manufacturing MOS type semiconductor device of vertica

1997-03-19

1998-03-31

Picardat, Kevin

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438270, 438272, H01L 2170

Patent

active

057338108

ABSTRACT:
A groove is formed on a semiconductor substrate. A mask material layer is so formed on the surface of the semiconductor substrate as to open a groove region. With the mask material layer used as a mask, a semiconductor layer is selectively formed on the semiconductor substrate exposed with the inner wall surface of the groove. Then, the mask material layer is removed. An insulating film is formed on the semiconductor layer formed on the inner wall surface of the groove and the surface of the semiconductor substrate. The groove is buried with a conductor.

REFERENCES:
patent: 5108938 (1992-04-01), Solomon
patent: 5349224 (1994-09-01), Gilbert et al.
patent: 5532179 (1996-07-01), Chang et al.

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