Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1993-03-09

1995-07-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, H01L 2968, H01L 2702

Patent

active

054323657

ABSTRACT:
There is disclosed a memory cell made with a semiconductor substrate for mounting integrated circuit elements, and having a trench for forming a capacitor region extending vertically to the surface of the substrate. In the substrate region around the trench is formed a cell plate region of second conductivity type for forming a charge storage region within the capacitor region. A high concentration semiconductor region of the same conductivity type as the substrate is formed in the substrate region outside the cell plate region to increase the charge stored in the capacitor region. A conducting material stores charge responding to the voltage given within the trench. A dielectric layer is formed between the conducting material and the cell plate.

REFERENCES:
patent: 4792834 (1988-12-01), Uchida
patent: 4918502 (1990-04-01), Kaga et al.
patent: 4969022 (1990-11-01), Nishimoto
patent: 4999689 (1991-03-01), Iguchi et al.
patent: 5006910 (1991-04-01), Taguchi
patent: 5170234 (1992-12-01), Baglee et al.

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