Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-09-17
1995-07-11
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
252 791, 252 795, H01L 2100
Patent
active
054317770
ABSTRACT:
Methods and compositions for the selective etching of silicon in the presence of p-doped silicon are disclosed whereby a portion of a silicon surface may be dissolved while a p-doped pattern in the surface remains substantially undissolved. The compositions comprise (a) an aqueous solution of an alkali metal hydroxide or a tetraalkylammonium hydroxide; and (b) a high flash point alcohol, phenol, polymeric alcohol, or polymeric phenol.
REFERENCES:
patent: 3160539 (1964-12-01), Hall et al.
patent: 3506509 (1970-11-01), Kragness et al.
patent: 3738881 (1973-06-01), Erdman et al.
patent: 3765969 (1973-10-01), Kragness et al.
patent: 3846198 (1974-06-01), Wen et al.
patent: 3909325 (1975-11-01), Church et al.
patent: 4113551 (1978-03-01), Bassous et al.
patent: 4137123 (1979-05-01), Bailey et al.
patent: 4567451 (1986-01-01), Greenwood
patent: 4781853 (1988-10-01), Lowry et al.
patent: 4859280 (1989-07-01), Lowry et al.
patent: 4918030 (1990-01-01), Lamb et al.
patent: 4941941 (1990-03-01), Austin et al.
patent: 4983246 (1991-01-01), Bunting
patent: 5185294 (1993-02-01), Lam et al.
Bassous "Anisotropic Etching of Silicon for 3-D Microstructure Fabrication" Electrochemical Society Symposium 1988 p. 23.
Kern "Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide" RCA Review 39, 278-308 (1978).
Linde and Austin "Wet Silicon Etching with Aqueous Amine Gallates" Journal of the Electrochemical Society 139 1170-1174 (1992).
Austin Larry W.
Linde Harold G.
Nakos James S.
Breneman R. Bruce
Goudreau George
International Business Machines - Corporation
LandOfFree
Methods and compositions for the selective etching of silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and compositions for the selective etching of silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and compositions for the selective etching of silicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-500990