Process of forming high contrast resist pattern in positive phot

Details Process of forming high contrast resist pattern in positive phot Process of forming high contrast resist pattern in positive phot

1985-08-19

1987-04-28

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430191, 430192, 430193, 430309, 430330, G03F 726

Patent

active

046614362

ABSTRACT:
A positive photoresist metal ion aqueous developer is provided that gives a high contrast to the photoresist.
The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a fluorocarbon surfactant. The incorporation of the fluorocarbon surfactant provides the unexpected increase in the contrast of the photoresist. The addition of the fluorocarbon surfactant increases the gamma from a typical photoresist gamma (.gamma.) of 3 or less to a gamma greater than 10.
The high contrast photoresist provides linewidth control and affords improved process latitude in photoresist imaging. The linewidth control is particularly critical in cases where fine lines are to be defined in the resist that covers steps or topography on the coated substrate. The higher the contrast, the less affected the resist by the topography, provided the exposure is adequate to expose the resist. The process latitude afforded by the high contrast is a result of the ability to over develop (develop longer) the exposed resist without affecting the unexposed resist in the adjacent areas.

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patent: 4381340 (1983-04-01), Walls
patent: 4487823 (1984-12-01), Lehmann et al.
patent: 4504566 (1985-03-01), Dueber

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