Method of forming semiconductor device

Details Method of forming semiconductor device Method of forming semiconductor device

1998-09-25

1999-08-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438305, 438430, 438589, H01L 21336

Patent

active

059435755

ABSTRACT:
A method for fabricating a semiconductor device, including the steps of providing a semiconductor substrate of a first conductivity type, defining a channel region and source/drain regions in the semiconductor substrate and etching the semiconductor substrate in the source/drain regions to a depth, forming an insulating film on a surface of the semiconductor substrate and a first semiconductor layer on the insulating film, etching the first semiconductor layer and the insulating film to expose the semiconductor substrate in the channel region, forming a second semiconductor layer on an entire surface of the semiconductor substrate and the first semiconductor layer, forming a gate insulating film on the second semiconductor layer, forming a gate electrode on the gate insulating film over the channel region, and forming impurity regions of a second conductivity type in the first and second semiconductor layers on both sides of the gate electrode.

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S. Shishiguchi, et al. "Boron Implanted Shallow Junction Formation By High-Temperature/Short-Time/High-Ramping-Rate(400.degree.C/sec)RTA ",1997 Symposium on VLSI Technology Digest of Technical Papers, pp. 89-90, 1997.

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