Semiconductor integrated circuit device

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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Details

365226, 365534, 365536, G11C 1604

Patent

active

059432713

ABSTRACT:
A semiconductor integrated circuit device permitting the chip area to be as small as possible without lowering the maximum arrival voltage is provided. This semiconductor integrated circuit device includes first to n-th charge pump circuits respectively driven on the basis of clocks CLK1, CLK2 to bias semiconductor substrate or well formed at the semiconductor substrate, wherein the i-th (i=1, . . . n-1) charge pump circuit is caused to be of a structure in which the current drivability is large, but the maximum arrival voltage is low as compared to the (i+1)-th charge pump circuit.

REFERENCES:
patent: 5315166 (1994-05-01), Arimoto
patent: 5408140 (1995-04-01), Kawai et al.
patent: 5524266 (1996-06-01), Tedrow et al.
patent: 5604707 (1997-02-01), Kuge et al.
patent: 5644534 (1997-07-01), Soejima
patent: 5715199 (1998-02-01), Kim
patent: 5874851 (1999-02-01), Shiota

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