Method for reforming undercoating surface and method for product

Details Method for reforming undercoating surface and method for product Method for reforming undercoating surface and method for product

1998-06-11

2000-10-17

Tsai, Jey

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438907, H01L 2131, H01L 21469

Patent

active

061331600

ABSTRACT:
This invention is directed to a method for the reform of an undercoating surface prior to the formation of a prospective film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. This method comprises the steps of forming an undercoating insulating film on a substrate by the use of a mixed gas consisting of an ozone-containing gas having ozone contained in oxygen in a concentration of not less than 4% and a first silicon-containing gas, and reforming the surface of said undercoating insulating film by exposing said surface to a second silicon-containing gas.

REFERENCES:
patent: 4268348 (1981-05-01), Allison et al.
patent: 5484749 (1996-01-01), Maeda et al.
patent: 5525551 (1996-06-01), Ohta

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