Method for fabricating a DRAM capacitor

Details Method for fabricating a DRAM capacitor Method for fabricating a DRAM capacitor

1999-05-19

2000-10-17

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, H01L 218242

Patent

active

061330892

ABSTRACT:
A method for fabricating a DRAM capacitor is described. First, a semiconductor substrate having a capacitor contact is provided. Next, a first polysilicon layer is formed. Then, an oxide layer and a silicon oxy-nitride layer are sequentially formed over the first polysilicon layer. Next, the silicon oxy-nitride layer, the oxide layer, and the first polysilicon layer are selectively etched to leave a rectangular stack layer. Afterwards, the oxide layer and the first polysilicon layer of the rectangular stack layer are etched from the sidewall direction to leave a double T-shaped stack layer. Then, second polysilicon layer is formed on the upper surface and the sidewall of the double T-shaped stack layer. Next, the second polysilicon layer is selectively removed. The remaining second and first polysilicon layer are used as the bottom electrode. Afterwards, a dielectric layer and an upper electrode are formed on the bottom electrode.

REFERENCES:
patent: 5716884 (1998-02-01), Hsue et al.
patent: 5926719 (1999-07-01), Sung

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