Method of fabricating static random access memory

Details Method of fabricating static random access memory Method of fabricating static random access memory

1999-05-25

2000-10-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438385, 438528, H01L 218244

Patent

active

061330841

ABSTRACT:
A method of fabricating a static random access memory. A gate oxide layer is formed on a substrate having active regions of an access transistor and a drive transistor. A Polysilicon layer is formed on the gate oxide layer. A germanium implantation is performed on the polysilicon layer of the active region of the drive region to form a polysilicon germanium layer. Thereafter, the polysilicon layer and the polysilicon germanium layer are patterned to form a poly gate and a polysilicon germanium gate on the active regions of the access transistor and the drive transistor. A lightly doped region is formed in the substrate beside the gates. A spacer is then formed on the sidewall of the gates. A heavily doped region is formed in the substrate beside the spacer.

REFERENCES:
patent: 4837173 (1989-06-01), Alvis et al.
patent: 5739056 (1998-04-01), Dennison et al.
patent: 5879971 (1999-03-01), Witek

Affiliated with

Also associated with

Rating

Method of fabricating static random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating static random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating static random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-467843