Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-01-13
2000-10-17
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438224, 438232, H01L 218238
Patent
active
061330779
ABSTRACT:
A high voltage transistor, formed in a bulk semiconductor material, has a gate region defined by a relatively thick field oxide and a source and drain on opposite sides of the field oxide.
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Coleman William David
Fahmy Wael
LSI Logic Corporation
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