Method of modifying the development profile of photoresists

Details Method of modifying the development profile of photoresists Method of modifying the development profile of photoresists

1978-02-24

1980-07-15

Bowers, Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430191, 430327, 430330, 430323, 430324, G03C 500

Patent

active

042129354

ABSTRACT:
The cross-sectional profile which is produced upon development of a layer of alkali soluble resin-diazo ketone photoresist is modified by treating the layer with a solvent or solvent mixture which is different from but miscible with the solvent or solvent mixture used to form the resist layer. The treating solvent is believed to dilute the resist solvent in a surface layer portion of the resist thereby modifying the alkaline developer solubility of this portion. Undercut resist profiles may be obtained by this method with normal optical exposure of the resist.

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patent: 4115128 (1978-09-01), Kita
Hamel, C. J. et al., IBM Tech. Discl. Bulletin, vol. 18, No. 6, 11/1975, p. 1775.

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