Semiconductor device having reduced gate overlapping capacitance

Details Semiconductor device having reduced gate overlapping capacitance Semiconductor device having reduced gate overlapping capacitance

1995-06-26

1997-03-11

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257386, 257900, H01L 2976, H01L 2994, H01L 27088

Patent

active

056104308

ABSTRACT:
The semiconductor device of the invention includes: a semiconductor substrate of a first conductivity type; a gate insulating film formed on a selected region on a main surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; and a source region and a drain region which are formed of high-concentration impurity diffusion layers of a second conductivity type in the semiconductor substrate. In the semiconductor device, a thickness of both end portions of the gate insulating film is larger than a thickness of a center portion of the gate insulating film, and each of the source region and the drain region includes a first portion located under both end-portions of the gate insulating film and a second portion having a thickness equal to or larger than a thickness of the first portion. An impurity concentration in the first portion is substantially equal to an impurity concentration in the second portion.

REFERENCES:
patent: 4638347 (1987-01-01), Iyer
patent: 5241211 (1993-08-01), Tashiro
patent: 5471080 (1995-11-01), Satoh et al.
Kurimoto et al, IEDM 91, pp. 541-544, 1991, "A T-Gate Overlapped LDD Device With High Circuit Performance and High Reliability."
Tseng et al, 1990 Symposium on VLSI Technology, pp. 111-112, 1990, "The Effect of Silicon Gate Microstructure and Gate Oxide Process . . . ".

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