Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2010-02-11

2011-12-06

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S164000, C438S763000, C438S785000, C257SE21280, C257SE21625

Reexamination Certificate

active

08071447

ABSTRACT:
A semiconductor device manufacturing method includes removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the substrate on the surface of the substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into an insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the substrate, and oxygen.

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