Semiconductor device and method of forming wafer-level...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Metallic housing or support

Reexamination Certificate

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C438S106000, C438S111000, C438S124000, C438S127000, C257SE21499, C257SE21500, C257SE21502, C257SE21503, C257SE21513

Reexamination Certificate

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08076184

ABSTRACT:
A semiconductor device has a base carrier with first and second opposing surfaces. A plurality of cavities and base leads between the cavities is formed in the first surface of the base carrier. The first set of base leads can have a different height or similar height as the second set of base leads. A concave capture pad can be formed over the second set of base leads. Alternatively, a plurality of openings can be formed in the base carrier and the semiconductor die mounted to the openings. A semiconductor die is mounted between a first set of the base leads and over a second set of the base leads. An encapsulant is deposited over the die and base carrier. A portion of the second surface of the base carrier is removed to separate the base leads. An interconnect structure is formed over the encapsulant and base leads.

REFERENCES:
patent: 7790576 (2010-09-01), Bathan et al.
patent: 7964450 (2011-06-01), Camacho et al.
patent: 2004/0262774 (2004-12-01), Kang et al.
patent: 2005/0077613 (2005-04-01), McLellan et al.
patent: 2006/0087037 (2006-04-01), Hsu

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