Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-12-18

2011-11-22

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S257000, C438S498000, C438S694000, C438S700000, C438S759000

Reexamination Certificate

active

08062947

ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device having a shared contact for connection between a source/drain region and a gate electrode. After formation of a gate electrode via a gate insulating film on a semiconductor substrate, a top surface of the substrate is covered with a cover film. After removal of the cover film from at least one of sidewall surface of the gate electrode and a part of the top surface of the substrate adjacent to the sidewall surface, a semiconductor layer is epitaxially grown on a top surface of an exposed substrate to electrically connect the substrate and the at least one sidewall surface of the gate electrode. Then, a source/drain region is formed in a top surface part of the substrate or the semiconductor layer using the gate electrode as a mask.

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