Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-15
2011-11-01
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S211000, C257S306000, C257SE21011, C257SE23145
Reexamination Certificate
active
08048736
ABSTRACT:
By forming metal capacitors in the metallization structures of semiconductor devices, complex manufacturing sequences in the device level may be avoided. The process of manufacturing the metal capacitors may be performed on the basis of well-established patterning regimes of modern metallization systems by using appropriately selected etch stop materials, which may enable a high degree of compatibility for forming via openings in a metallization layer while providing a capacitor dielectric of a desired high dielectric constant in the capacitor.
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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2008 006 962.0 dated Aug. 27, 2008.
Feustel Frank
Frohberg Kai
Werner Thomas
Advanced Micro Devices , Inc.
Fahmy Wael
Ingham John C
Williams Morgan & Amerson P.C.
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