Process for manufacturing semiconductor device involving dry etc

Details Process for manufacturing semiconductor device involving dry etc Process for manufacturing semiconductor device involving dry etc

1989-12-29

1991-07-23

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156668, 156904, H01L 2100

Patent

active

050340905

ABSTRACT:
In the manufacture of a semiconductor device, the dry etching of a resist layer of an organic material can be utilized without decreasing the yield of the semi-conductor layer, by using a resist layer of an organic material containing heavy metals in an amount of less than 20 ppb for each heavy metal.

REFERENCES:
patent: 4634496 (1987-01-01), Mase et al.
patent: 4675273 (1987-06-01), Woods et al.
patent: 4680084 (1987-07-01), Heimann et al.
Solid State Technology, vol. 14, No. 9, Sep. 1971, "Properties and Process for Photoresists in Semiconductor Manufacture", by K. G. Clark, pp. 48-53.
Chemisch Magazine, Apr. 1986, "Zuiver Chemicalien Voor De Halfgeleiderindustrie", by U. D. Postma, pp. 289-293, Rijswijk.
Extended Abstracts, vol. 86-2, Oct. 19-24, 1985, "New Device Degradation Mechanism: Heavy Metal Contamination from Resist During Plasma Stripping", by S. Fujimura et al., Abstract No. 305, Princeton, New Jersey, pp. 456-457.
Solid State Technology, vol. 28, No. 5, May 1985, "Dry Etch Resistance of Metal-Free and Halogen-Substituted Resist Materials", by H. Gokan et al., Port Washington, New York, pp. 163-167.

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