Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2009-07-15

2011-12-27

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S286000, C257SE21335

Reexamination Certificate

active

08084317

ABSTRACT:
Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a gate electrode on a semiconductor substrate having a device isolation region, a first drain spacer on one side of the gate electrode, a second drain spacer next to the first drain spacer, a first source spacer on an opposite side of the gate electrode and a portion of the semiconductor substrate where a source region is to be formed, a second source spacer on side and top surfaces of the first source spacer, and LDDs adjacent to the first drain spacer and below the first source spacers, wherein the LDD below the first source spacer is thinner than the LDD adjacent to the first drain spacer.

REFERENCES:
patent: 7282426 (2007-10-01), Mathew et al.
patent: 7638399 (2009-12-01), Tsujii
patent: 2008/0233694 (2008-09-01), Li
patent: 2010/0244106 (2010-09-01), Parker et al.
Korean Office Action dated Jun. 1, 2010; Korean Patent Application No. 10-2008-0073164; Korean Intellectual Property Office, Republic of Korea.

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