Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-05

2011-11-15

Stark, Jarrett (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29255, C438S682000

Reexamination Certificate

active

08058695

ABSTRACT:
A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in contact with silicon surface, and containing substantially no nitrogen. The top NiSi region is a nitrided NiSi region provided in contact with the bottom NiSi region, and containing nitrogen. The NiSi layer has a total thickness of 50 nm or below.

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patent: 2004-319592 (2004-11-01), None
patent: 2005-522035 (2005-07-01), None

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