Oxide semiconductor thin-film transistor

Details Oxide semiconductor thin-film transistor Oxide semiconductor thin-film transistor

2009-06-01

2011-11-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S066000, C257S327000, C257S368000, C257SE29277

Reexamination Certificate

active

08053836

ABSTRACT:
An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

REFERENCES:
patent: 2009/0294772 (2009-12-01), Jeong et al.

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