Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2007-02-06
2011-10-18
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S037000, C324S216000, C324S076110
Reexamination Certificate
active
08038897
ABSTRACT:
A method for inspecting semiconductor wafers patterned by a photomask includes loading a first wafer and scanning a first image of the first wafer, loading a second wafer and scanning a second image of the second wafer, comparing the first and second images, and classifying a difference detected between the first and second images as a potential defect on the photomask. The potential defect includes a haze defect on the photomask.
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Chinese Office Action for Application No. 2007101376680, dated Aug. 28, 2009, 6 pages.
Gau Tsai-Sheng
Hung Chang-Cheng
Angadi Maki A
Haynes and Boone LLP
Norton Nadine G
Taiwan Semiconductor Manufacturing Company , Ltd.
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