Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-23
2011-10-18
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S218000, C438S424000, C438S631000, C438S637000, C438S778000
Reexamination Certificate
active
08039339
ABSTRACT:
A semiconductor device is formed. A first gate dielectric layer is formed over the semiconductor layer. A first conductive layer is formed over the first gate dielectric. A first separation layer is formed over the first conductive layer. A trench is formed in the semiconductor layer to separate the first mesa and the second mesa. The trench is filled with an isolation material to a height above a top surface of the first conductive layer. The first conductive layer is removed from the second mesa. A second conductive layer is formed over the first separation layer of the first mesa and over the second mesa. A planarizing etch removes the second conductive layer from over the first mesa. A first transistor of a first type is formed in the first mesa, and a second transistor of a second type is formed in the second mesa.
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Grant John M.
Samavedam Srikanth B.
Venkatesan Suresh
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Garcia Joannie A
Richards N Drew
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