Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2009-11-27

2011-11-01

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S588000, C257SE27064

Reexamination Certificate

active

08048744

ABSTRACT:
A semiconductor device and fabricating method thereof are disclosed. The method includes forming a polysilicon layer on a semiconductor substrate including a high-voltage area and a low-voltage area, partially etching the polysilicon layer in the low-voltage area, forming an anti-reflective layer on the polysilicon layer to reduce a step difference between the high-voltage and low-voltage areas, forming a photoresist pattern in the high-voltage and low-voltage areas, and forming a high-voltage gate and a low-voltage gate by etching the polysilicon layer using the photoresist pattern as an etch mask.

REFERENCES:
patent: 6033944 (2000-03-01), Shida
patent: 6600212 (2003-07-01), Takayanagi et al.
patent: 2006/0211200 (2006-09-01), Tomita
patent: 2008/0160704 (2008-07-01), Jang

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