Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-05-01
2011-10-11
Estrada, Michelle (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S672000, C438S675000, C257S104000, C257S175000, C257S288000, C257S594000, C257S910000, C257SE27051, C257SE29327, C257SE21053, C257SE21352, C257SE21366
Reexamination Certificate
active
08034716
ABSTRACT:
Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer may be formed over the interior surface of the diode opening and contacting the active region. The diode opening may initially be filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that may be heavily doped with a first type dopant and a bottom portion that may be lightly doped with a second type dopant. The top portion may be bounded by the bottom portion so as not to contact the titanium silicide layer. In one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
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Doan Trung T.
Gonzalez Fernando
Lowrey Tyler A.
Turi Raymond A.
Wolstenholme Graham R.
Estrada Michelle
Micro)n Technology, Inc.
Traskbritt
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