Methods of forming a compound semiconductor device including...

Details Methods of forming a compound semiconductor device including... Methods of forming a compound semiconductor device including...

2009-07-23

2011-10-04

Everhart, Caridad (Department: 2895)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S567000, C257SE21085, C257SE21135

Reexamination Certificate

active

08030188

ABSTRACT:
Provided is a method of forming a compound semiconductor device. In the method, a dopant element layer is formed on an undoped compound semiconductor layer. An annealing process is performed to diffuse dopants in the dopant element layer into the undoped compound semiconductor layer, thereby forming a dopant diffusion region. A rapid cooling process is performed using liquid nitrogen with respect to the substrate having the dopant diffusion region.

REFERENCES:
patent: 5700714 (1997-12-01), Ogihara et al.
patent: 5982024 (1999-11-01), Hata et al.
patent: 6274293 (2001-08-01), Gupta et al.
patent: 7282428 (2007-10-01), Inada
patent: 7622372 (2009-11-01), Chu et al.
patent: 2002/0081764 (2002-06-01), Springthorpe et al.
patent: 2003/0209192 (2003-11-01), Hasegawa et al.
patent: 2005/0094692 (2005-05-01), Kim
patent: 2007/0243657 (2007-10-01), Basol et al.
patent: 2008/0175993 (2008-07-01), Ashjaee et al.
patent: 54-103670 (1979-08-01), None
patent: 2000-228541 (2000-08-01), None
patent: 10-1999-0006160 (1999-01-01), None
patent: 10-0660240 (2006-12-01), None
Abstract in English for JP 54-103670, Kobayashi et al (1979) 2 pages.
Hyesook Hong et al., “Cryogenic Processed Metal-Semiconductor-Metal (MSM) Photodetectors on MBE Grown ZnSe” IEEE Transactions on Electron Devices, vol. 46, No. 6, Jun. 1999, pp. 1127-1134.

Affiliated with

Also associated with

Rating

Methods of forming a compound semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a compound semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a compound semiconductor device including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4277848