Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2009-01-26

2011-10-18

Estrada, Michelle (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S482000, C438S486000, C438S788000, C257SE21297, C257SE21412, C257SE21379, C257SE29003

Reexamination Certificate

active

08039333

ABSTRACT:
A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

REFERENCES:
patent: 6255149 (2001-07-01), Bensahel et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6406973 (2002-06-01), Lee
patent: 7202513 (2007-04-01), Chidambarrao et al.
patent: 7220626 (2007-05-01), Zhu et al.
patent: 5-183154 (1993-07-01), None
patent: 2001-189451 (2001-07-01), None

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