Semiconductor device and fabrication method for the same

Details Semiconductor device and fabrication method for the same Semiconductor device and fabrication method for the same

2010-10-06

2011-12-13

Stark, Jarrett (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S328000, C257S499000, C257S288000

Reexamination Certificate

active

08076196

ABSTRACT:
The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a second conductive film formed one on the other with a first interface film therebetween; and a diode having a diode electrode made of the second conductive film and a second interface film as a silicon oxide film formed at the interface between the diode electrode and a substrate. The first interface film has a thickness with which electrical connection between the lower electrode and the upper electrode is maintained, and the second interface film has a thickness with which epitaxial growth between the substrate and the diode electrode is inhibited.

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Notice of Allowance issued in U.S. Appl. No. 12/369,283, mailed Jul. 28, 2010.

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