Structures of and methods and tools for forming in-situ...

Details Structures of and methods and tools for forming in-situ... Structures of and methods and tools for forming in-situ...

2009-09-03

2011-10-18

Garber, Charles (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S680000, C438S686000, C438S641000, C438S643000, C438S674000, C438S675000, C438S676000, C438S677000, C438S687000, C257S751000, C257SE21584, C257SE23141, C257SE21106, C257SE23010, C257SE23162, C118S719000

Reexamination Certificate

active

08039966

ABSTRACT:
A structure, tool and method for forming in-situ metallic/dielectric caps for interconnects. The method includes forming wire embedded in a dielectric layer on a semiconductor substrate, the wire comprising a copper core and an electrically conductive liner on sidewalls and a bottom of the copper core, a top surface of the wire coplanar with a top surface of the dielectric layer; forming a metal cap on an entire top surface of the copper core; without exposing the substrate to oxygen, forming a dielectric cap over the metal cap, any exposed portions of the liner, and the dielectric layer; and wherein the dielectric cap is an oxygen diffusion barrier and contains no oxygen atoms.

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